Structural and Electrical Properties of (Cu, Co) Co-Doped ZnO Thin Film

Ping Cao; Yue Bai

doi:10.4028/www.scientific.net/AMR.774-776.964

Paper Titles

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A New Type of Surfactant in the Synthesis and Performance Evaluation
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Structural and Electrical Properties of (Cu, Co) Co-Doped ZnO Thin Film
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Phase Evolutions in the Metallic Precursors of the Ternary Copper-Indium-Gallium System
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Effect of NO₂^--N Concentration on Denitrifying Phosphorus Accumulating of Nitrosation Denitrifying Phosphorus Accumulating Organisms
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 774-776Structural and Electrical Properties of (Cu, Co)...

Structural and Electrical Properties of (Cu, Co) Co-Doped ZnO Thin Film

Abstract:

Successful synthesis of Cu, Co co-doped ZnO film is obtained by sol-gel method. The structural and electrical properties of the sample were investigated. X-ray diffraction spectroscopy analyses indicate that the Co and Cu co-doping can not disturb the structure of ZnO. No additional peaks are observed in the Zn_0.99Co_0.01Cu_xO and Cu⁺ and Co²⁺ substitute for Zn²⁺ without changing the wurtzite structure. By Hall-effect measurement p-type conductivity was observed for the Cu co-doped film. XPS result confirmed Cu ions are univalent in the films.