Preparation and Characterization of Ga2xIn2(1-x)O3 Films Deposited on α-Al2O3 (0001) by MOCVD
Ga2xIn2(1-x)O3 thin films with different gallium content x [x = Ga/(Ga+In) atomic ratio] have been prepared on -Al2O3 (0001) substrates at 650°C by metalorganic chemical vapor deposition (MOCVD). Structural, electrical and optical properties of these films have been investigated in detail. The XRD analysis revealed that, as the gallium content increased, the crystalline quality of the films decreased. The highest Hall mobility of the films was 41.32 cm2v−1s−1. The absolute average transmittance of the Ga2xIn2(1-x)O3 thin films in the visible range exceeded 91%. The band gap could be tuned from 3.59 to 4.87 eV as gallium content increased.
Yansheng Yin and Xin Wang
L. Y. Kong et al., "Preparation and Characterization of Ga2xIn2(1-x)O3 Films Deposited on α-Al2O3 (0001) by MOCVD", Advanced Materials Research, Vols. 79-82, pp. 1535-1538, 2009