Preparation and Characterization of Ga2xIn2(1-x)O3 Films Deposited on α-Al2O3 (0001) by MOCVD

Abstract:

Article Preview

Ga2xIn2(1-x)O3 thin films with different gallium content x [x = Ga/(Ga+In) atomic ratio] have been prepared on -Al2O3 (0001) substrates at 650°C by metalorganic chemical vapor deposition (MOCVD). Structural, electrical and optical properties of these films have been investigated in detail. The XRD analysis revealed that, as the gallium content increased, the crystalline quality of the films decreased. The highest Hall mobility of the films was 41.32 cm2v−1s−1. The absolute average transmittance of the Ga2xIn2(1-x)O3 thin films in the visible range exceeded 91%. The band gap could be tuned from 3.59 to 4.87 eV as gallium content increased.

Info:

Periodical:

Advanced Materials Research (Volumes 79-82)

Edited by:

Yansheng Yin and Xin Wang

Pages:

1535-1538

DOI:

10.4028/www.scientific.net/AMR.79-82.1535

Citation:

L. Y. Kong et al., "Preparation and Characterization of Ga2xIn2(1-x)O3 Films Deposited on α-Al2O3 (0001) by MOCVD", Advanced Materials Research, Vols. 79-82, pp. 1535-1538, 2009

Online since:

August 2009

Export:

Price:

$35.00

In order to see related information, you need to Login.

In order to see related information, you need to Login.