Preparation and Characterization of Ga2xIn2(1-x)O3 Films Deposited on α-Al2O3 (0001) by MOCVD

Ling Yi Kong; Fan Yang; Jin Ma; Cai Na Luan; Zhen Zhu

doi:10.4028/www.scientific.net/AMR.79-82.1535

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 79-82Preparation and Characterization of Ga2xIn2(1-x)O3...

Preparation and Characterization of Ga_2xIn_2(1-x)O₃ Films Deposited on α-Al₂O₃ (0001) by MOCVD

Abstract:

Ga2xIn2(1-x)O3 thin films with different gallium content x [x = Ga/(Ga+In) atomic ratio] have been prepared on -Al2O3 (0001) substrates at 650°C by metalorganic chemical vapor deposition (MOCVD). Structural, electrical and optical properties of these films have been investigated in detail. The XRD analysis revealed that, as the gallium content increased, the crystalline quality of the films decreased. The highest Hall mobility of the films was 41.32 cm2v−1s−1. The absolute average transmittance of the Ga2xIn2(1-x)O3 thin films in the visible range exceeded 91%. The band gap could be tuned from 3.59 to 4.87 eV as gallium content increased.

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Periodical:

Advanced Materials Research (Volumes 79-82)

Pages:

1535-1538

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.79-82.1535

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Online since:

August 2009

Authors:

Ling Yi Kong, Fan Yang, Jin Ma, Cai Na Luan, Zhen Zhu

Keywords:

Bandgap, Ga_2xIn_2(1-x)O₃, MOCVD

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