New Opportunities in Lead Selenide Nanolayers

Arif M. Pashaev; Omar I. Davarashvili; Megi I. Enukashvili; Zaira G. Akhvlediani; Revaz G. Gulyaev; Vladimir P. Zlomanov

doi:10.4028/www.scientific.net/AMR.815.473

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 815New Opportunities in Lead Selenide Nanolayers

New Opportunities in Lead Selenide Nanolayers

Abstract:

The article deals with the peculiarities of creation of effective negative pressure and the increase in the forbidden gap width in PbSe nanolayers. The dielectric state that maybe realized under these conditions and their appropriate doping can be considered as a new resource in lead selenide nanolayers. The increasing of the tangential lattice constant with higher growth temperature and layer growth rate confirms this consideration. When determining the forbidden gap width, the optical transmission spectra were processed by a model of the Fabry-Perot interferometer, and, at high concentration of free current carriers, the absorption on them and their degeneracy were taken into consideration.

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Progress in Materials Science and Engineering: ICMSE 2013

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Advanced Materials Research (Volume 815)

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473-477

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.815.473

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Online since:

October 2013

Authors:

Arif M. Pashaev, Omar I. Davarashvili, Megi I. Enukashvili, Zaira G. Akhvlediani, Revaz G. Gulyaev, Vladimir P. Zlomanov

Keywords:

Forbidden Gap Width, Growth Rate, Layer Thickness, Negative Pressure, Optical Transmission, Resource

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References

[1] B.A. Volkov, L.I. Ryabova, D.R. Khokhlov. Impurities with varying valence in solid solutions based on lead telluride. Uspekhi Phys. Nauk, 152 (2002), 1-68.

DOI: 10.1070/pu2002v045n08abeh001146

Google Scholar

[2] A.M. Pashaev, O.I. Davarashvili, V. A. Aliyev, M. I. Enukashvili, V. P. Zlomanov. The effect of deformations on the change in the forbidden gap width in the epitaxial layers of AIV BVI semiconductors. Georgian Engineering News, 3 (2008), 53-55.

Google Scholar

[3] A.M. Pashaev, O.I. Davarashvili, Z. G. Akhvlediani, M. I. Enukashvili, R. G. Gulyaev, V. P. Zlomanov. Growth and properties of strained epitaxial nanolayers of lead selenide. In: Book of Abstracts of the International Conference on Functional Materials and Nanotechnologies, Riga, (2012).

DOI: 10.4028/www.scientific.net/amr.815.473

Google Scholar

[4] A.M. Pashaev, O.I. Davarashvili, Z. G. Akhvlediani, M. I. Enukashvili, R. G. Gulyaev, V. P. Zlomanov. Unrelaxed State in Epitaxial Heterostructures Based on Lead Selenide. J. Mod. Phys., 3(6) (2012), 502- 510.

DOI: 10.4236/jmp.2012.36068

Google Scholar

[5] A.M. Pashaev, O.I. Davarashvili, M. I. Enukashvili, L.P. Bychkova, V. P. Zlomanov. Analysis of the Optical Properties of Epitaxial Lead Selenide Layers. Trans. Nat. Aviation Acad. Sci. Azer. 13(3) (2011), 3-12.

DOI: 10.17628/ecb.2019.8.57-62

Google Scholar

[6] Y.V. Mal'tsev, E.D. Nensberg, A.V. Petrov, S.A. Semiletov, Y.I. Yukhanov. Electrical and optical studies on PbS. Phys. Tverd. Tela, 8(7) (1966), 2154-2162.

Google Scholar

[7] Y.I. Ravich, B. A. Efimova, I. A. Smirnov. Methods of investigation of semiconductors as applied to lead chalcogenides PbTe, PbSe and PbS. Moscow, Nauka, (1968), 363p.

Google Scholar