Study on Fabrication and Fast Switching of High Voltage SiC JFET

Gang Chen; Song Bai; Run Hua Huang; Yong Hong Tao; Ao Liu

doi:10.4028/www.scientific.net/AMR.827.282

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 827Study on Fabrication and Fast Switching of High...

Study on Fabrication and Fast Switching of High Voltage SiC JFET

Abstract:

SiC devices have excellent properties such as ultra low loss, high withstand voltage, large capacity, high frequency, and high temperature operation compared with Si devices. The SiC JFET is expected to be appropriate for the power device because a JFET has no oxide-semiconductor interface in the channel region and does not use the low mobility SiC MOSFET inversion layer as a channel. Forward I-V up to 4A for SiC VJFET, Gate voltage from 2V to 3.5V by step 0.5V. Reverse I-V characteristics up to 4500V (VG=-8V) for SiC VJFET, Gate voltage from-4V to-8V by step-2V. Turn-off characteristics are studied and fast turn-off time of 136ns at room temperature under DC voltage of 600V is successfully demonstrated.

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Periodical:

Advanced Materials Research (Volume 827)

Pages:

282-286

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.827.282

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Online since:

October 2013

Authors:

Gang Chen, Song Bai, Run Hua Huang, Yong Hong Tao, Ao Liu

Keywords:

Junction Field Effect Transistor (JFET), Ohmic, Silicon Carbide (SiC), Trench

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