Influence of ssDNA Immobilization on the Conductance of Solution Gated Graphene Transistors

Abstract:

Carboxyl-modified graphene materials in both oxide and reduced state were explored in parallel for the preparation of field-effect transistors (FET). They were solution gated by phosphate buffer solution (PBS) (pH 7.2). Their conductance were examined and compared with unmodified graphene transistors, firstly. Then, after single strand DNA molecules were immobilized on reduced and oxide graphene transistors, their conductance and compared. Here ssDNA molecules were amino-tagged at the terminal five. It was found that ambipolar characteristic was exhibited by reduced graphene transistors, even they were undergone carboxyl modification. And it was also discovered that there were opposite conductance variation with the increasing of ssDNA concentrations and bigger changes were obtained by reduced carboxyl-modified graphene transistors.

• Periodical: Advanced Materials Research (Volume 830)
• Pages: 302-305
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.830.302
• Online since: October 2013
• Authors: Meng Song, Cheng Ju, Yunfang Jia*
• Keywords: Conductance, Graphene, ssDNA Immobilization, Transistor

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