[1]
S. Kim, M. Jun, and S. Hwang, Preparation of undoped lead titanate ceramics via sol – gel processing, Journal of American Ceramic Society 96 (1999) 289–296.
DOI: 10.1111/j.1551-2916.1999.tb20060.x
Google Scholar
[2]
A. Pignolet, P. E. Schmid, L. Wang, and F. Levy, Structure and electrical properties of sputtered lead titanate thin films, J. Phys. D: Appl. Phys 619 (1991) 58–61.
DOI: 10.1088/0022-3727/24/4/014
Google Scholar
[3]
C. H. Wang and D. J. Choi, Effect of the Pb / Ti source ratio on the crystallization of pbtio 3 thin films grown by metalorganic chemical vapor deposition at low temperature of 400˚C, Journal of American Ceramic Society 13 (2001) 207–213.
DOI: 10.1111/j.1151-2916.2001.tb00632.x
Google Scholar
[4]
X. G. Tang, L. L. Jiang, and A. L. Ding, The effect of thickness on the dielectric properties of highly (111) oriented Pb(Zr0.53,Ti0.47)O3 thin films prepared by a simple sol – gel route, Microelectronic Engineering 65 (2003) 387–393.
DOI: 10.1016/s0167-9317(03)00006-6
Google Scholar
[5]
D. Bao, X. Yao, N. Wakiya, K. Shinozaki, and N. Mizutani, Structural, dielectric, and ferroelectric properties of PbTiO3 thin films by a simple sol-gel technique, Materials Science and Engineering: B 94 (2002) 269–274.
DOI: 10.1016/s0921-5107(02)00131-9
Google Scholar
[6]
A. Sidorkin, L. Nesterenko, A. Sidorkin, S. Ryabtsev, and G. Bulavina, Ageing and fatigue of lead titanate and lead zirconate titanate thin ferroelectric films, Solid State Sciences 12 (2010) 302–306.
DOI: 10.1016/j.solidstatesciences.2009.04.031
Google Scholar
[7]
J. Yang, W. S. Kim, and H. P. U, The effect of excess Pb content on the crystallization and electrical properties in sol - gel derived Pb(Zr0.4,Ti0.6)O3 thin films, Thin Solid Films 377–378 (2000) 739–744.
DOI: 10.1016/s0040-6090(00)01325-0
Google Scholar
[8]
G. H. Haertling, Ferroelectric ceramics: history and technology, Journal of the American Ceramic Society 82 (1999) 797–818.
DOI: 10.1111/j.1151-2916.1999.tb01840.x
Google Scholar
[9]
J. Schwarzkopf and R. Fornari, Epitaxial growth of ferroelectric oxide films, Progress in Crystal Growth and Characterization of Materials 52 (2006) 159–212.
DOI: 10.1016/j.pcrysgrow.2006.06.001
Google Scholar
[10]
T. I. R. Thomas, S. Mochizuki, T. Mihara, Preparation of ferroelectric Pb(Zr0.5,Ti0.5)O3 thin film by sol-gel process: dielectric and ferroelectric properties, Material Letters 57 (2003) 2007–2014.
DOI: 10.1016/s0167-577x(02)01130-8
Google Scholar
[11]
H. Zulkefle, L. N. Ismail, R. A. Bakar, and M. R. Mahmood, Molarity effect on the structural properties of nano-mgo thin films, Advanced Materials Research 403–408 (2011) 1168–1172.
DOI: 10.4028/www.scientific.net/amr.403-408.1168
Google Scholar
[12]
L. N. Ismail, R. A. Bakar, and M. Rusop, The effect of drying temperature towards electrical and structural properties of magnesium oxide, International Conference on Electronic Devices, System and Applications (2011) 276–279.
DOI: 10.1109/icedsa.2011.5959073
Google Scholar