Negative Pattern Scheme (NPS) Design for Nanowire Formation Using Scanning Electron Microscope Based Electron Beam Lithography Technique

Mohammad Nuzaihan; Uda Hashim; Siti Fatimah Abdul Rahman; Tijjani Adam

doi:10.4028/www.scientific.net/AMR.832.419

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 832Negative Pattern Scheme (NPS) Design for Nanowire...

Negative Pattern Scheme (NPS) Design for Nanowire Formation Using Scanning Electron Microscope Based Electron Beam Lithography Technique

Abstract:

In this work, we report the used of Negative Pattern Scheme (NPS) by Electron Microscope Based Electron Beam Lithography (EBL) Technique in connection with scanning electron microscope (SEM) for creating extremely fine nanowires. These patterns have been designed using GDSII Editor and directly transferred on the sample coated with ma-N 2400 Series as the negative tone e-beam resist. The NPS designs having line width of approximately 100 nm are successfully fabricated at our lab. The profile of the nanowire can be precisely controlled by this technique. The optical characterization that is applied to check the nanowires structure using SEM and Atomic Force Microscopy (AFM).

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Periodical:

Advanced Materials Research (Volume 832)

Pages:

419-422

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.832.419

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Online since:

November 2013

Authors:

Mohammad Nuzaihan, Uda Hashim, Siti Fatimah Abdul Rahman, Tijjani Adam

Keywords:

Electron Beam Lithography, ma-N2400 Negative Resist, Negative Pattern Scheme, Silicon Nanowire

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References

[1] B.P. Azeredo, J Sadhu, J Ma, K Jacobs, J Kim, K Lee, J H Eraker, X Li, S Sinha, N Fang, P Ferreira, K Hsu, Silicon nanowires with controlled sidewall profile and roughness fabricated by thin-film dewetting and metal-assisted chemical etching, Nanotechnology 24 (2013), art. no. 225305.

DOI: 10.1088/0957-4484/24/22/225305

Google Scholar

[2] M.Nuzaihan Md Nor, S Niza Mohammad Bajuri, Uda Hashim, Pattern Design for Nanowire Formation Using Raith Elphy Quantum GDSII Editor, Proceeding of Annual Fundamental Science Seminar AFSS,(2005), 110-116.

Google Scholar

[3] Nor, M.N.M., Hashim, U., Halim, N.H.A., Hamat, N.H.N., Top-down approach: Fabrication of silicon nanowires using scanning electron microscope based electron beam lithography method and inductively coupled plasma-reactive ion etching, AIP Conference Proceedings, 1217, (2010), 272-278.

DOI: 10.1063/1.3377829

Google Scholar

[4] Nuzaihan Md Nor,M., Hashim, U., Halim, N.H.A., Bajuri, S.N.M., Nanowire formation for single electron transistor using SEM based Electron Beam Lithography(EBL) technique: Positive tone vs negative tone e-beam resist, NSTI Nanotech 2006 Technical proceeding, 3 (2006) 266-269.

DOI: 10.4028/www.scientific.net/amr.832.419

Google Scholar

[5] H.Elsner , H G Meyer, Nanometer and High Aspect Ratio Patterning By electron Beam Lithography Using A Simple DUV Negative Tone Resist, International Conference, Micro and Nano Engineering, Vol.57-58 (2000), 291-296.

DOI: 10.1016/s0167-9317(01)00498-1

Google Scholar

[6] H. Elsner and H G Meyer, A. Voigt and G.Gruetzner, Evaluation of the ma-N 2400 Series DUV Photoresist for the Electron Beam Exposure,MNE 98, Leuven, Belgium 22-24 Sept 1998 , Microelectronic Engineering 46 (1999), 389-392.

DOI: 10.1016/s0167-9317(99)00113-6

Google Scholar

[7] A. Voigt, H Elsner , H G Meyer, G. Gruetzer, Nanometer Patterning Using ma-N 2400 Series Duv Negatinve Photoresist and Electron Beam Lithograpy, Proceedings of SPIE Vol. 3676 (1999), 485-491.

DOI: 10.1117/12.351078

Google Scholar