Fabrication of Silicon Nanowires by Electron Beam Lithography and Thermal Oxidation Size Reduction Method

Mohammad Nuzaihan; Uda Hashim; Taib Nazwa; Tijjani Adam

doi:10.4028/www.scientific.net/AMR.832.415

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 832Fabrication of Silicon Nanowires by Electron Beam...

Fabrication of Silicon Nanowires by Electron Beam Lithography and Thermal Oxidation Size Reduction Method

Abstract:

A simple method for the fabrication of silicon nanowires using Electron Beam Lithography (EBL) combined with thermal oxidation size reduction method is presented. EBL is used to define the initial silicon nanowires of dimensions approximately 100 nm. Size-reduction method is employed for reaching true nanoscale of dimensions approximately 20 nm. Dry oxidation of silicon is well investigated process for self-limited size-reduction of silicon nanowires. In this paper, successful size reduction of silicon nanowires is presented and surface topography characterizations using Atomic Force Microscopy (AFM) are reported.

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Periodical:

Advanced Materials Research (Volume 832)

Pages:

415-418

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.832.415

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Online since:

November 2013

Authors:

Mohammad Nuzaihan, Uda Hashim, Taib Nazwa, Tijjani Adam

Keywords:

Advance Nanolithography, Atomic Force Microscopy (AFM), BOE, EBL, Inductively Coupled Plasma-Reactive Ion Etching, ma-N2400 Negative Resist, Silicon Nanowire, Size-Reduction, Thermal Oxidation

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