Simulation, Fabrication and Characterization of 6500V 4H-SiC JBS Diode

Run Hua Huang; Yong Hong Tao; Gang Chen; Song Bai; Rui Li; Yun Li

doi:10.4028/www.scientific.net/AMR.846-847.737

Paper Titles

Design Research of Optical Fiber Sensor Based on Reflective Intensity-Type Optical Sensing
p.714

Sneak Circuit Partition Analysis Algorithm Based on Network Flow Simulation
p.718

Lifetime Prediction for Power IGBT Modules in Metro Traction Systems
p.724

Topological Structure of Main Circuit Inverter Based on Soft-Switching Technology and Parameters Adaptive
p.732

Simulation, Fabrication and Characterization of 6500V 4H-SiC JBS Diode
p.737

Development of 1000V SiC JBS Diodes
p.741

The Application of Capacitive Output Impedance of Inverter in Wind Farms
p.745

The Analysis of the Performance of Active Frequency Drift Islanding Method
p.750

Sampling Inspection Method for Life Prediction of Smart Meters
p.756

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 846-847Simulation, Fabrication and Characterization of...

Simulation, Fabrication and Characterization of 6500V 4H-SiC JBS Diode

Abstract:

4H-SiC JBS diode with breakdown voltage higher than 6.5 kV has been successfully fabricated on 4H-SiC wafers with epitaxial layer. In this paper, the simulation, the fabrication, and the electrical characteristics of 4H-SiC JBS diode were reported. The drift layer thickness and doping are 55 μm and 9×10¹⁴ cm³ respectively. 60 floating guard rings edge were fabricated as termination. The on-state voltage was 4 V at J_F = 7A.