Development of 1000V SiC JBS Diodes

Gang Chen; Lin Wang; Run Hua Huang; Ao Liu; Song Bai; Yun Li

doi:10.4028/www.scientific.net/AMR.846-847.741

Paper Titles

Sneak Circuit Partition Analysis Algorithm Based on Network Flow Simulation
p.718

Lifetime Prediction for Power IGBT Modules in Metro Traction Systems
p.724

Topological Structure of Main Circuit Inverter Based on Soft-Switching Technology and Parameters Adaptive
p.732

Simulation, Fabrication and Characterization of 6500V 4H-SiC JBS Diode
p.737

Development of 1000V SiC JBS Diodes
p.741

The Application of Capacitive Output Impedance of Inverter in Wind Farms
p.745

The Analysis of the Performance of Active Frequency Drift Islanding Method
p.750

Sampling Inspection Method for Life Prediction of Smart Meters
p.756

Modeling and Simulation of Smart Meters Based on Matlab/Simulink Software
p.760

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 846-847Development of 1000V SiC JBS Diodes

Development of 1000V SiC JBS Diodes

Abstract:

High voltage 4H-SiC Ni Schottky junction barrier schottky (JBS) diode with breakdown voltage of 1000V and forward current of 1A has been fabricated. A low reverse leakage current below 4.7×10^-6A/cm² at the bias voltage of-1000V has been obtained. The forward on-state current was 1A at V_F= 2.2V. The chip is 1.3mm×1.3mm. The turn-on voltage is about 1.4V. The on-state resistance is 14.5mΩ·cm². The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was assembled in a SMB package. The thickness of the N-epilayer is 10μm, and the doping concentration is 4×10¹⁵cm³. A floating guard rings edge termination have been used to improve the effectiveness of the edge termination technique. By using WTi/Au multilayer metal structure, the double side Au process of 4H-SiC JBS diode is formed. We use the PECVD Si_xN_y/SiO₂ as the passivation dielectric and a non photosensitive polyamide as the passivation in the end.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 846-847)

Pages:

741-744

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.846-847.741

Citation:

Cite this paper

Online since:

November 2013

Authors:

Gang Chen*, Lin Wang, Run Hua Huang, Ao Liu, Song Bai, Yun Li

Keywords:

4H-SiC, Floating Guard Rings, Junction Barrier Schottky (JBS) Diode

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] K. Ohtsuka, Y. Matsuno, K. Kuroda, H. Sugimoto, Y. Tarui, M. Imaizumi, T. Takami. Leakage current in Ti/4H-SiC Schottky barrier diode. Physica B 376–377 (2006) 370–373.

DOI: 10.1016/j.physb.2005.12.096

Google Scholar

[2] Chen Gang, Li Zhe-yang, Bai Song, Ren Chun-jiang. Ti/4H-SiC Schottky barrier diodes with field plate and B+ implantation edge termination technology. CHINESE JOURNAL OF SEMICONDUCTORS, Vo1. 28 No. 9, Sep., 2007, pp.1333-1336.

Google Scholar

[3] P. A. Ivanov, I. V. Grekhov, A. S. Potapov, N. D. Il'inskaya, T. P. Samsonova, and O. I. Kon'kov, Experimental 4H-SiC Junction-Barrier Schottky (JBS) Diodes, [J], ISSN 1063-7826, Semiconductors, 2009, Vol. 43, No. 9, pp.1209-1212.

DOI: 10.1134/s106378260909019x

Google Scholar

[4] J. M. Hancock. SiC Device Applications: Identifying and developing commercial Applications. Materials Science Forum Vols. 527-529 (2006) pp.1135-1140.

DOI: 10.4028/www.scientific.net/msf.527-529.1135

Google Scholar