Improvement on ESD Protection of Output Driver in DC Brushless Fan ICs by the FOD Protection Block

Shen Li Chen; Der Ann Fran

doi:10.4028/www.scientific.net/AMR.850-851.449

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 850-851Improvement on ESD Protection of Output Driver in...

Improvement on ESD Protection of Output Driver in DC Brushless Fan ICs by the FOD Protection Block

Abstract:

In this paper, ESD improvements of an output driver that driving a large current in DC brushless fan ICs under HBM ESD stress is investigated. In order to improve ESD robustness, some protection blocks will be designed and implemented by the layout parameters and structures tuning. From the preliminary ESD testing result, it was found that the positive Pad-to-VSS (PS) zapping mode of the original DUT is weakest for the output driver of DC brushless fan ICs during an HBM zapping. After a systematic improvement, it is found that the FOD structure of adding protection circuits can effectively protect the whole-chip ESD damage, as compared with the original DUT; the values of ESD failure threshold (V_ESD) are increased > 57%, which allows output driver devices more robust in the ESD immunity.

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Periodical:

Advanced Materials Research (Volumes 850-851)

Pages:

449-453

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.850-851.449

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Online since:

December 2013

Authors:

Shen Li Chen*, Der Ann Fran

Keywords:

Electrostatic Discharge (ESD), ESD Failure Threshold (V_ESD), Field-Oxide Device (FOD), Human-Body Model (HBM), Positive Pad-To-VSS (PS) Mode

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* - Corresponding Author

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