Silicon Nanowires Based Solar Cell Using Native Oxide and Silicon Nitride Bi-Layer Passivation

Xing Xing Lin

doi:10.4028/www.scientific.net/AMR.853.341

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 853Silicon Nanowires Based Solar Cell Using Native...

Silicon Nanowires Based Solar Cell Using Native Oxide and Silicon Nitride Bi-Layer Passivation

Abstract:

Silicon nanowires (SiNWs) based solar cells are passivated by native oxide and SiN_x bi-layer. In comparison with cells passivated by SiN_x single layer, bi-layer passivation exhibits higher effective minority lifetime, illustrating a better surface passivation effect, which leads to a gain of internal quantum efficiency in the short wavelength range, a better output performance with an increase of 0.16% in efficiency. The data obtained from this work is fundamental and has some reference value for future studies.

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Periodical:

Advanced Materials Research (Volume 853)

Pages:

341-344

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.853.341

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Online since:

December 2013

Authors:

Xing Xing Lin*

Keywords:

Native Oxide, Passivation, Silicon Nanowires, SiN_x, Solar Cell

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