Effect of High Pressure Torsion on Crystal Orientation to Improve the Thermoelectric Property of a Bi2Te3-Based Thermoelectric Semiconductor

Maki Ashida; Takashi Hamachiyo; Kazuhiro Hasezaki; Hirotaka Matsunoshita; Z. Horita

doi:10.4028/www.scientific.net/AMR.89-91.41

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 89-91Effect of High Pressure Torsion on Crystal...

Effect of High Pressure Torsion on Crystal Orientation to Improve the Thermoelectric Property of a Bi₂Te₃-Based Thermoelectric Semiconductor

Abstract:

A Bi2Te3-based thermoelectric semiconductor was subjected by high pressure torsion (HPT). Sample disks of p-type Bi0.5Sb1.5Te3.0 were cut from sintered compacts that were made by mechanically alloying (MA) followed by hot pressing. Disks were subjected by HPT with 1, 5 and 10 turns at 473 K under 6.0 GPa of pressure. Crystal orientation was investigated by X-ray diffraction. Microstructures were characterized using scanning electron microscopy. Results indicated that HPT disks after 5 turns had a preferred orientation and a fine grain compared with pre-HPT disks while the orientation factor was decreased after HPT using 10 turns. The power factor had a maximum value at 5 turns as determined by measuring its thermoelectric properties. A maximum power factor of 4.30×10-3 Wm-1K-2 was obtained for HPT disks after 5 turns. This value was larger than that for the pre-HPT disk. The over-HPT of 10 turns was found to have caused a decrease in the preferred orientation leading to a low power factor.

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Periodical:

Advanced Materials Research (Volumes 89-91)

Pages:

41-46

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.89-91.41

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Online since:

January 2010

Authors:

Maki Ashida, Takashi Hamachiyo, Kazuhiro Hasezaki, Hirotaka Matsunoshita, Z. Horita

Keywords:

Antimony, Bismuth, Crystal Orientation, High Pressure Torsion (HPT), Tellurium, Thermoelectric Semiconductor

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