Crack Tip Dislocations Observed by Combining Scanning Transmission Electron Microscopy and Computed Tomography
Crack tip dislocations and dislocations introduced by three point-bending tests at high temperature are observed by combinating scanning transmission electron microscopy and computed tomography (STEM-CT). Commercially available P type (001) single crystal silicon wafers were employed. A series of STEM image was acquired from -60º to +60º in tilt range with 2º in tilt step. The diffraction vector was maintained close to g(hkl) = 220 during the acquisition by adjusting the  direction of the sample parallel to the tilt axis of the holder. Reconstructed images of dislocations revealed dislocation structures in three-dimension.
T. Chandra, N. Wanderka, W. Reimers , M. Ionescu
S. Sadamatsu et al., "Crack Tip Dislocations Observed by Combining Scanning Transmission Electron Microscopy and Computed Tomography", Advanced Materials Research, Vols. 89-91, pp. 473-478, 2010