Crack Tip Dislocations Observed by Combining Scanning Transmission Electron Microscopy and Computed Tomography

Abstract:

Crack tip dislocations and dislocations introduced by three point-bending tests at high temperature are observed by combinating scanning transmission electron microscopy and computed tomography (STEM-CT). Commercially available P type (001) single crystal silicon wafers were employed. A series of STEM image was acquired from -60º to +60º in tilt range with 2º in tilt step. The diffraction vector was maintained close to g(hkl) = 220 during the acquisition by adjusting the [110] direction of the sample parallel to the tilt axis of the holder. Reconstructed images of dislocations revealed dislocation structures in three-dimension.

• Periodical: Advanced Materials Research (Volumes 89-91)
• Pages: 473-478
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.89-91.473
• Online since: January 2010
• Authors: Sunao Sadamatsu, Masaki Tanaka, Kenji Higashida, Kenji Kaneko, Masatoshi Mitsuhara, S. Hata, M. Honda
• Keywords: Electron Tomography, Fracture, Shielding

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