High-Performance Multilevel-Storage Cu-Doped SiOx-Based Nonvolatile Resistance Memory Using Ion Bombardment Technique

Wen Luh Yang; Chin Hsuan Liao; Sheng Hsien Liu

doi:10.4028/www.scientific.net/AMR.893.794

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 893High-Performance Multilevel-Storage Cu-Doped...

High-Performance Multilevel-Storage Cu-Doped SiO_x-Based Nonvolatile Resistance Memory Using Ion Bombardment Technique

Abstract:

Multi-level-cell (MLC) operation of Cu-doped SiO_x-based (SiO_x:Cu-based) resistance random access memory (ReRAM) has been reported for the first time. For this study, we employed a novel ion bombardment-induced (IB-induced) SiO_x:Cu switching layer (SL). Using modulation of SET-current compliance, we completed 2-bit-per-cell memory application. The MLC resistance switching process is described in detail. Owing to controllability of Cu source from advanced IB technique, the IB-induced SiO_x:Cu SL shows good cell-to-cell uniformity of MLC resistance switching parameters, including operation voltages and resistance states. Additionally, the IB-induced TaN/SiO_x:Cu/TaN ReRAM exhibits infinite potential for MLC operation, such as over 3 times differentiation space among memory states, robust resistance retention, and promising operation endurance properties. During frequent MLC resistance switching, moreover, the IB-induced SiO_x:Cu-based device also has excellent single-cell uniformity of memory states due to IB-induced thin Cu filament.

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Periodical:

Advanced Materials Research (Volume 893)

Pages:

794-797

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.893.794

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Online since:

February 2014

Authors:

Wen Luh Yang*, Chin Hsuan Liao, Sheng Hsien Liu

Keywords:

Cu-Doped SiO_x, Ion Bombardment (IB), Multi-Level-Cell (MLC), ReRAM

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