Ultra Thin SiN_X on a-Si In Situ Hot-Wire CVD by Decomposing NH₃ Gas

Abstract:

The fabrication of ultra thin silicon nitride (SiN_X) layer (< 2 nm) on amorphous silicon (a-Si) in-situ hot-wire CVD by decomposing ammonia (NH₃) gas is reported. Approximately 1.5 nm thin SiN_X is formed by nitridation of 40 nm thick a-Si for 10 min at substrate temperature of 250 °C. The amorphous phase of SiN_X formed on a-Si and a-Si layer deposited on c-Si wafer is identified by Raman spectroscopy. The formation of ultra thin SiN_X by nitridation of a-Si at 250 °C is confirmed by X-ray photoelectron spectroscopy (XPS) depth profile measurement of SiN_X/a-Si structured film. The report indicates that the HWCVD method can be used for fabricating superlattice structures consisting of ultra thin SiN_X layers (< 2 nm).

• Periodical: Advanced Materials Research (Volume 894)
• Pages: 421-426
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.894.421
• Online since: February 2014
• Authors: Dharmendra Kumar R. Rai, Dayanand S. Sutar, Chetan Singh Solanki, K.R. Balasubramaniam
• Keywords: A-Si, Hot-Wire CVD, Nitridation, RAMAN, Ultra Thin SiN_X, XPS Depth Profile

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