Photoelectrochemical Characterizations of CuInS₂ and Cu(In,Ga)S₂ Thin Films Fabricated by a Spray Pyrolysis Method

Abstract:

Polycrystalline CuInS₂ chalcopyrite thin films were formed on a Mocoated glass substrate by annealing of a spray deposited precursor film in a sulfur atmosphere at 600 °C. Partial incorporation of Ga in the CuInS₂ film with a Ga/In ratio of ca. 0.2 to form a Cu (In,Ga)S₂ mixed crystal was also prepared. Photoelectrochemical (PEC) analyses revealed that the Ga incorporation was effective to modulate electric and semiconductive properties of the chalcopyrite film. As a result, relatively large cathodic photocurrent responses in PEC analyses as well as high photovoltaic properties of a solar cell based on the Cu (In,Ga)S₂ film were obtained.

• Periodical: Advanced Materials Research (Volume 894)
• Pages: 427-431
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.894.427
• Online since: February 2014
• Authors: Shigeru Ikeda, Midori Nonogaki, Wilman Septina, Gunawan Gunawan, Takashi Harada, Michio Matsumura
• Keywords: Cu Chalcopyrite, Photoelectrochemical Properties, Solar Cell, Spray Pyrolysis

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