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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 894Growth and Characterization of ZnS Films by...

Growth and Characterization of ZnS Films by Chemical Bath Deposition

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Abstract:

ZnS films are formed by chemical bath deposition using variety zinc sources such as zinc acetate (Zn (CH3COO)₂), zinc sulfate (ZnSO₄), zinc nitrate (Zn (NO₃)₂), iodide zinc (ZnI₂), zinc chloride (ZnCl₂) and zinc acetyl (Zn (acac)₂). X-ray diffraction results show all broad spectra of ZnS. It is considered that amorphous ZnS can be grown. All samples show high transmittance. It is deduced that the decrease of transmittance around 3.7 eV is due to the ZnS band gap. Scanning electron microscopy shows that grain size becomes large with decreasing the instability constants of the zinc sources. It is assumed that zinc becomes ionization with decreasing the instability constants. All samples show a signal of O-H bond from fourier transform infrared spectra. It is assumed that the Zn (OH)₂ exists in each sample.

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Advanced Materials Research IV

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Periodical:

Advanced Materials Research (Volume 894)

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416-420

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https://doi.org/10.4028/www.scientific.net/AMR.894.416

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Online since:

February 2014

Authors:

Akiko Mochihara, Kenji Yoshino

Keywords:

CBD, FT-IR, Semiconductor, XRD, ZnS

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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