TMAH Etching of Silicon Wafer for Detector Fabrication

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Anisotropic wet etching of high resistivity silicon by TMAH for the fabrication of large area silicon radiation detectors is studied in this work. TMAH is widely applied in microelectronics and micromechanical fabrication etching low resistivity silicon, whereas the etching of high resistivity silicon was seldom studied by the industry. This work focused on the research of TMAH etching of high resistivity lager area silicon wafer aiming at its application in silicon radiation detector fabrication. We investigated the etching properties of TMAH of 4 inch (111) silicon wafers. Various parameters combinations were explored, such as TMAH solution concentration of 25wt%, 15wt% and 5wt%, and temperature of 95 °C, 90 °C and 85 °C. Etch rate, etch uniformity and silicon surface roughness were observed.

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15-20

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February 2014

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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[1] J. S. You, D. Kim and J. Y. Huh: Solar Energy Materials & Solar Cells Vol. 66 (2001) p.37.

Google Scholar

[2] O. Tabata, R. Asahi and H. Funabashi: Sensors and Actuators A: Physical Vol. 34 (1992) p.51.

Google Scholar

[3] J. Rouhi, S. Mahmud and S.D. Hutagalung: Semiconductor Science and Technology Vol. 27 (2012) p.065001.

Google Scholar

[4] J.S. You, D. Kim and J.Y. Huh: Solar energy materials and solar cells Vol. 66 (2001) p.37.

Google Scholar

[5] B. Schmidt, J. von Borany and D. Schubert: Nuclear Instruments and Methods in Physics Research Section A Vol. 326 (1993) p.21.

Google Scholar

[6] P X. Dong, M. Yu andD. Tian: ECS Transactions Vol. 44 (2012) p.1413.

Google Scholar

[7] E. Steinsland, T. Finstad and A. Hanneborg: Sensors and Actuators A: Physical Vol. 86 (2000) p.73.

Google Scholar