Investigation of Room Temperature Photoluminescence of ZnO Films Induced by Different Laser Fluence Irradiation

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In this paper, we investigated the photoluminescence property of ZnO films which were irradiated by KrFexcimer laser. Through the analysis of photoluminescence and UV-VIS spectra, it is shown that the red shift of band gap forthe irradiated sample. Room temperature UV photoluminescence of ZnO film is composed of contribution from the FX, the neutral donor bound exciton (D0X) emission and the longitudinal optical (LO) phonon replicas of the bound exciton transition (D0X-1LO). The visible emission band is ascribed toVO+, VZn-, Oiand Vo++. It shows that KrF laser irradiation could effectively modulate the exciton emission, which is important for the application of high performance of emitting optoelectronic devices.

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53-58

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February 2014

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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[1] S.Y. Park, P.J. Kim, Y.P. Lee, A.W. Shin, T.H. Kim, J.H. Kang and J.Y. Rhee: Adv. Mater. Vol. 19 (2006), p.3496.

Google Scholar

[2] M. Suchea, S. Christoulakis, N. Katsarakis, T. Kitsopoulos and G. Kiriakidis: Thin Solid FilmsVol. 515 (2007), p.6562.

DOI: 10.1016/j.tsf.2006.11.151

Google Scholar

[3] E. J. L. Arredondo, A. Maldonado, R. Asomoza, D.R. Acosta, M.A. Melendez-Lira and L. Olvera: Thin Solid FilmsVol. 490 (2005), p.132.

DOI: 10.1016/j.tsf.2005.04.043

Google Scholar

[4] S.S. Kurbanov, G.N. Panin T.W. Kimd and T.W. Kang:J. Lumin. Vol. 129 (20090, p.1099.

Google Scholar

[5] Y. Yang, X.Y. Sun, B.K. Tay, G.F. You, S.T. Tan and K.L. Teo: Appl. Phys. Lett. Vol. 93 (2008), p.253107.

Google Scholar

[6] J.R. Schneck, E. Bellotti, P. Lamarre and L.D. Ziegler: Appl. Phys. Lett. Vol. 93 (2008), p.102111.

Google Scholar

[7] Z.F. Shi X.C. Xia, W. Yin, S.K. Zhang, H. Wang, J. Wang, L. Zhao, X. Dong, B.L. Zhang and G.T. Du: Appl. Phys. Lett. Vol. 100(2012), p.101112.

Google Scholar

[8] S.K. Lee, J.Y. Son: Appl. Phys. Lett. Vol. 100(2012), p.132109.

Google Scholar

[9] F. Güder, Y. Yang,J. Danhof,A. Hartel U.T. Schwarz and M. Zacharias: Appl. Phys. Lett. Vol. 99(2011), p.023105.

DOI: 10.1063/1.3609321

Google Scholar

[10] T.B. Hur, Y.H. Hwang and H.K. Kim: Appl. Phys. Lett. Vol. 86(2005), p.193113.

Google Scholar

[11] S. Lee, D.Y. Kim: J. Appl. Phys. Vol. 104(2008), p.093515.

Google Scholar

[12] M.S. Kima, K.G. Yima, D.Y. Leeb, J.S. Kimc, J.S. Kimd, J.S. Sone and J.Y. Leem: Appl. Surf. Sci. Vol. 257(2011), p.9019.

Google Scholar

[13] J.H. Noh, H.S. Jung, J.K. Lee and J.Y. Kim:J. Appl. Phys. Vol. 104(2008), p.073706.

Google Scholar

[14] J. Lim, C.M. Lee: Thin Solid Films Vol. 515(2007), p.3335.

Google Scholar

[15] Y.L. Yang, H.W. Yan and Z.P. Fu: Solid State Commun. Vol. 138(2006), p.521.

Google Scholar

[16] W. Shan, W. Walukewicz, J.W. Ager, K.M. Yu, H.B. Yuan, H.P. Xin, G. Cantwell and J.J. Song: Appl. Phys. Lett. Vol. 86(2005), p.191911.

DOI: 10.1063/1.1923757

Google Scholar

[17] D.W. Hamby, D.A. Lucca, M.J. Kopfstein and G. Cantwell: J. Appl. Phys. Vol. 93(2003), p.3214.

Google Scholar

[18] V.A. Dijken, E.A. Meulenkamp, D. Vanmaekelbergh and A. Meijerink: J. Lumin. Vol. 87(2000), p.454.

Google Scholar

[19] K. Vanheusden, W.L. Warren, C.H. Seager, D.R. Tallant, J.A. Voigt and B.E. Gnade: J. Appl. Phys. Vol. 79(1996), p.7983.

Google Scholar

[20] S. Kasap and P. Capper: Springer Handbook of ElectronicMaterials(2006)p.47.

Google Scholar

[21] B.L. Zhu, X.Z. Zhao, S. Xu, F.H. Su and G.H. Li: Jpn. J. Appl. Phys. Vol. 47(2008), p.2225.

Google Scholar

[22] S. Dutta, S. Chattopadhyayand D. Jana: J. Appl. Phys. Vol. 100 (2006), p.114328.

Google Scholar

[23] P. Jitti-a-porn, S. Suwanboon, P. Amornpitoksuk, O. Patarapaiboolchai: J. Ceram. Process. Res. Vol. 12(2011), p.85.

Google Scholar

[24] J. Liu, Y. Zhao, Y.J. Jiang, C.M. Lee, Y.L. Liu and G.G. Sui: Appl. Phys. Lett. Vol. 97(2010), p.231907.

Google Scholar

[25] M. Nie, Y. Zhao, Y. Zeng and Y.J. Jiang: ActaPhysicaSinica Vol. 62(2013), p.176801.

Google Scholar

[26] L.S. Vlasenko and G.D. Watkins: Phys. Rev. B Vol. 71(2005), p.125210.

Google Scholar

[27] S.M. Evans, N.C. Giles, L.E. Halliburton and L.A. Kappers: J. Appl. Phys. Vol. 103(2008), p.043710.

Google Scholar

[28] C. Gonzalez, D. Galland and A. Herve: Phys. Status Solidib Vol. 72(1975), p.309.

Google Scholar

[29] D. Galland and A. Herve: Solid State Commun. Vol. 14(1974), p.953.

Google Scholar

[30] A. Janottiand C.G. Van de Walle: Appl. Phys. Lett. Vol. 87(2005), p.122102.

Google Scholar

[31] X.L. Wu, G.G. Siu, C.L. Fu and H.C. Ong: Appl. Phys. Lett. Vol. 78(2001), p.2285.

Google Scholar