Defect Distribution and Yield Analysis Technique on Silicon Wafer

Warakorn Praepattarapisut; Weera Pengchan; Toempong Phetchakul; Amporn Poyai

doi:10.4028/www.scientific.net/AMR.911.271

Paper Titles

Microstructure Study on Gd-Doped BaTiO₃ Sol-Gel Multilayer Thin Films Using AFM for Optoelectronic Applications
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Intrinsic Ferroelectric Coercive Field Calculation for BZT Films Doped by Indium and Lanthanum
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Applying the Recovery Voltage Method (RVM) to Study the Degradation of High Power Transformer Insulation
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Platinum-Incorporating Graphene Counter Electrode for In₂O₃-Based DSSC with Various Annealing Temperatures
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Defect Distribution and Yield Analysis Technique on Silicon Wafer
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Diamond Microelectrodes for Amperometric Oxygen Sensor
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Materials and Processes in Heat Assisted Magnetic Recording
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Characterization and Composition of Oil Extracted from Bastard Poom Beans (Sterculia foetida L) and its Potential as a Biofuel
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Monitoring of Draft Beer Fermentation Process by Electronic Nose
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 911Defect Distribution and Yield Analysis Technique...

Defect Distribution and Yield Analysis Technique on Silicon Wafer

Abstract:

This paper presents the defect distribution and yield analysis on silicon wafer. The generation and recombination lifetime were the key parameters and obtained from the currentvoltage and the capacitancevoltage of diode characteristics for forward bias. Then 3D contour maps were plotted as defect distribution and can be analyzed for the whole wafer which is useful for the yield analysis of the defects that were caused from fabrication process.

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Periodical:

Advanced Materials Research (Volume 911)

Pages:

271-275

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.911.271

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Online since:

March 2014

Authors:

Warakorn Praepattarapisut, Weera Pengchan, Toempong Phetchakul, Amporn Poyai

Keywords:

CMOS Technology, Defect, Generation Lifetime, Leakage Current, P-N Junctions, Recombination Lifetime

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