The Effect of Ion Implantation on ISFET-Sensing Membrane

Abstract:

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This research studied the effect of ion implantation on electrical properties of ISFETs. In the experiments the sensing membrane area were implanted with 3 types of ions (Boron(B), Phosphorus(P), and Arsenic(As)). After the implantation without annealing, the IV-characteristics of Source/Drain (P-N junction) of ISFET were performed and compared with the behaviour before implantation. In addition, the response to acid-alkaline (sensitivity) of ISFET were also studied. From the results the leakage current of source-drain, P-N junction like, decreases significantly after the implantation. However, this process damaged the devices so that the response to acid-alkaline are lost.

Info:

Periodical:

Advanced Materials Research (Volumes 93-94)

Edited by:

S. Suttiruengwong and W. Sricharussin

Pages:

133-136

DOI:

10.4028/www.scientific.net/AMR.93-94.133

Citation:

R. Piyananjaratsri et al., "The Effect of Ion Implantation on ISFET-Sensing Membrane", Advanced Materials Research, Vols. 93-94, pp. 133-136, 2010

Online since:

January 2010

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Price:

$35.00

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