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The Effect of Ion Implantation on ISFET-Sensing Membrane

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Abstract:

This research studied the effect of ion implantation on electrical properties of ISFETs. In the experiments the sensing membrane area were implanted with 3 types of ions (Boron(B), Phosphorus(P), and Arsenic(As)). After the implantation without annealing, the IV-characteristics of Source/Drain (P-N junction) of ISFET were performed and compared with the behaviour before implantation. In addition, the response to acid-alkaline (sensitivity) of ISFET were also studied. From the results the leakage current of source-drain, P-N junction like, decreases significantly after the implantation. However, this process damaged the devices so that the response to acid-alkaline are lost.

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Periodical:

Advanced Materials Research (Volumes 93-94)

Pages:

133-136

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.93-94.133

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Online since:

January 2010

Authors:

Rungtawee Piyananjaratsri, Win Bunjongpru, E. Chaowicharat, O. Trithaveesak, K. Saeteaw, C. Hruanun, Amporn Poyai

Keywords:

Ion Implantation, ISFET, Sensing Membrane

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© 2010 Trans Tech Publications Ltd. All Rights Reserved

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References

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