Effects of Cu Doping on the Microstructure and Electrical Properties of Sr₃YCo₄O_10.5+δ Polycrystalline

Abstract:

Polycrystalline samples of Sr₃YCo_4-xCu_xO_10.5+δ (x=0, 0.2, 0.4, 0.6) have been prepared by solid state reaction method. Crystal structure has been checked by X-ray diffraction (XRD) and the results indicate that Sr₃YCo_4-xCu_xO_10.5+δ (x=0, 0.2, 0.4) with single phase have been synthesized in air, and the lattice parameters of Sr₃YCo_4-xCu_xO_10.5+δ (x=0, 0.2, 0.4) increase with increasing Cu content. Microstructure analysis demonstrates that the grain sizes enlarge and the number of pores decreases with increasing Cu content. The change of porous structure with different Cu contents is discussed by the liquid sintering theory. The temperature dependence of resistivity (ρ-T) curves of Sr₃YCo_4-xCu_xO_10.5+δ show nonmetallic behavior. And the electrical resistivity decreases successively with increasing Cu content, which is caused by the porous structure scattering the carriers as well as the increase of hole carriers.

• Periodical: Advanced Materials Research (Volume 934)
• Pages: 80-85
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.934.80
• Online since: May 2014
• Authors: Xiao Li Du*, Lan Yu, Bin Zhang, Shi Jin Song, Guo Fang Li
• Keywords: Doping, Electrical Properties, Porous Structure, Sr₃YCo₄O_10.5+δ Polycrystalline

References

[1] H. Nakao, T. Murata, D. Bizen, Y. Murakami, K. Ohoyama, K. Yamada, S. Ishiwata, W. Kobayashi, and I. Terasaki: J. Phys. Soc. Jpn. Vol. 80(2011), 023711.

DOI: 10.1143/jpsj.80.023711

[2] O.A. Drozhzhin, V.Y. Pomjakushi: Phys. Rev. B Vol. 80 (2009), 024409.

[3] S. Yoshida, W. Kobayashi, T. Nakano, I. Terasaki: J. Phys. Soc. Jpn. Vol. 78 (2009), 094711.

[4] Y.F. Zhang, S. Sasaki, O. Yanagisawa, M. Izumi: J. Magn. Magn. Mater. Vol. 310 (2007), p.1002.

[5] I. Terasaki: Physica B Vol. 383 (2006), p.107.

[6] M.A. Korotin, S.Y. Ezhov, I.V. Solovyev, V.I. Anisimov: Phys. Rev. B Vol. 54 (1996), p.5309.

[7] F. Lindberg, O.A. Drozhzhin, S.Y. Istomin, G. Svensson, F.B. Kaynak, P. Svedlindh, P. Warnicke, A. Wannberg, A. Mellergard, and E.V. Antipov: J. Solid State Chem. Vol. 179, (2006), p.1434.

DOI: 10.1016/j.jssc.2006.01.057

[8] M. James, D. Cassidy, D.J. Goossens, R.L. Withers: J. Solid State Chem. Vol. 177 (2004), p.1886.

[9] R.L. Withers, M. James, D.J. Goossens: J. Solid State Chem. Vol. 174 (2003), p.198.

[10] W. Kobayashi, S. Yoshida, I. Teresaki: Prog. Solid State Chem. Vol. 35 (2007), p.355.

[11] S.Y. Istomin, O.A. Drozhzhin, P.S. Napolsky, S.N. Putinlin, A.A. Gippius, E.V. Antipov: Solid State Ionics Vol. 179 (2008), 1054.

DOI: 10.1016/j.ssi.2008.01.017

[12] S. Ya. Istomin, J. Grins, G. Svensson, O.A. Drozhzhin, V.L. Kozhevnikov, E.V. Antipov, and J.P. Attfield: Chem. Mater. Vol. 15 (2003), p.4012.

DOI: 10.1021/cm034263e

[13] S. Ya Istomin, O.A. Drozhzhin, G. Svesson, and E.V. Antipov: Solid State Sci. Vol. 6 (2006), p.539.

[14] D.D. Khalyavin, L.C. Chapon, E. Suard, J.E. Parker, S.P. Thompson, A.A. Yaremchenko, and V.V. Kharton: Phys. Rev. B. Vol. 83 (2011), 140403(R).

[15] I. Terasaki, M. Iwakawa, T. Nakano, A. Tsukuda, W. Kobayashi: Dalton Trans. Vol. 39 (2010), p.1005.

DOI: 10.1039/b914661j

[16] N.V. Nong, S. Yanagiya, S. Monica, N. Pryds, M. Ohtaki: J. Electron. Mater. Vol. 40 (2011), p.5.

[17] W.D. Kingery: J. Appl. Phys. Vol. 30 (1959), p.301.

[18] T. Suzuki, I. Kosacki, H.U. Anderson: Solid State Ionics Vol. 151 (2002), p.111.