Effect of Spontaneous Radiation of Vertical-Cavity Semiconductor Optical Amplifier Bistability

Li Zhou

doi:10.4028/www.scientific.net/AMR.945-949.2209

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 945-949Effect of Spontaneous Radiation of Vertical-Cavity...

Effect of Spontaneous Radiation of Vertical-Cavity Semiconductor Optical Amplifier Bistability

Abstract:

Includes the establishment of the spontaneous radiation of vertical cavity semiconductor optical amplifier (VCSOA) bistable model, numerical analysis and comparison of VCSOA and traditional SOA bistable characteristics of amplified spontaneous emission (ASE) sensitivity.

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Periodical:

Advanced Materials Research (Volumes 945-949)

Pages:

2209-2212

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.945-949.2209

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Online since:

June 2014

Authors:

Li Zhou

Keywords:

Bistable, Bistable Ring Degeneracy, Semiconductor Optical Amplifier, Switching Power, VCSOA

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References

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