Influence of Hf and H2O2 on Morphology of Silicon Formed by Ag Assisted Chemical Etching

Guo Feng Ma; Heng Ye; Hong Lin Zhang; Chun Lin He; Li Na Sun

doi:10.4028/www.scientific.net/AMR.953-954.1045

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 953-954Influence of Hf and H2O2 on Morphology of Silicon...

Influence of Hf and H₂O₂ on Morphology of Silicon Formed by Ag Assisted Chemical Etching

Abstract:

The Ag-assisted electroless etching of p-type silicon substrate in HF/H₂O₂ solution at room temperature was investigated. In this work, the effects of HF, H₂O₂ and their volume ratio on morphology and growth of p-type silicon substrate surface by using metal assisted etching were investigated in order to produce a highly efficient antireflecting structure. The Ag metal particles were deposited onto Si wafer by electroless deposition from a metal salt solution including HF. The experimental results show that the growth rate and morphology of the pores formed on the Ag metalized Si surfaces are strongly dependent on the volume ratio of HF and H₂O₂.

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Advanced Materials Research (Volumes 953-954)

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1045-1048

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https://doi.org/10.4028/www.scientific.net/AMR.953-954.1045

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Online since:

June 2014

Authors:

Guo Feng Ma*, Heng Ye, Hong Lin Zhang, Chun Lin He, Li Na Sun

Keywords:

Ag, H₂O₂ Solution, HF Solution, P-Type Silicon

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