TEM Specimen Preparation of GaN Thin Films

Cui Yun Li; Jun Cao

doi:10.4028/www.scientific.net/AMR.978.7

Paper Titles

Experiment Study on Mixed Combustion of Biomass and Coal
p.3

TEM Specimen Preparation of GaN Thin Films
p.7

Study of Material Properties for the Multielement in Dipsacus Asper Wall — From Panzhihu with Application of Microwave Assisted Digestion and the ICP-AES Method
p.11

Study of Material Properties for Microwave Assisted Digestion of Fallopia Multiflora for Multielement Analysis by ICP-AES
p.15

Determination of Metal Elements in Maca from Different Areas by Inductively Coupled Plasma-Atomic Emission Spectrometry
p.19

Research on Material Properties of Engineering Materials with Construct Disaster Preparedness of the Four-Dimensional Space in Hilly Cities’ Communities
p.23

The Practical Research of Engineering Materials for the Temporary House after Earthquake
p.27

Application of New Materials in the Field of Sports Apparel
p.31

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 978TEM Specimen Preparation of GaN Thin Films

TEM Specimen Preparation of GaN Thin Films

Abstract:

Cross-sectional TEM observation can be used as an important method in the microstructure investigation of thin films. However, the specimen preparation for cross-sectional TEM observation is generally regarded as a challenging task. In this paper, we discussed the preparation of TEM cross-sectional specimens. An example from GaN thin films grown on Si substrate was discussed correspondingly.