The Dynamic Characteristics of Al Gate CuPc Thin Film Transistor

Abstract:

We have fabricated Au/CuPc/Al/CuPc/Au organic thin film transistor (OTFTs) using vacuum deposition with CuPc thin films of stable chemical property and semi conductive Al gate thin film electrode. The static and dynamic characteristics were tested at room temperature. The test results show that the switching speed of the OTFT is t_on=2.68ms, t_off= 1.32ms, amplification bandwidth is 400Hz, and the cutoff frequency f_c=400Hz when inputting 100Hz small square wave signal. Our OTFT has submicron conductive channel, shows operation characteristics of high frequency, high speed and high current density. Good static and dynamic characteristics of OTFT can be obtained by controlling appropriate Al gate film thickness and CuPc film thickness.

• Periodical: Advanced Materials Research (Volume 981)
• Pages: 830-833
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.981.830
• Online since: July 2014
• Authors: Ze Ying Wang*, Dong Xing Wang, Yong Shuang Zhang, Yue Yue Wang, Jing Hua Yin, Hong Zhao
• Keywords: Al Gate Electrode, CuPc, Organic Material, Schottky Barrier, Thin Film Transistor

References

[1] Sinha. B: Current Science Vol. 100 (2011), p.654.

[2] Rand Barry P, Xue Jiangeng, Uchida Soichi, Forrest.S. R: Journal of Applied Physics Vol. 98 (2005), p.124902.

[3] Marinov. O, Deen. M. J: Journal of Vacuum Science &Technology Vol. 24 (2006), p.1728.

[4] M.S. Meruvia and M.L. Sartorelli: APPLIED PHYSICS LETTERS Vol. 84 (2004), p.3978.

[5] Wang dong-xing, Zhu Min, Kazuhiro Kudo: CHINESE JOURNALOF ELECTRONICS, Vol. 11 (2002), p.204.

[6] Xiaolin Wang, Dongxing Wang: Measurement, Information and Control (MIC) Vol. 1 (2012), p.432.

[7] Khasan S. Karimov, Ibrahim Qazi: Chem Solids Physics and Chemistry of Solids (Phys) Vol. 32 (2008), p.13.