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The Preparation and Characteristics Analysis of ZnO/Ni/ZnO Schottky Junction TFTs

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Abstract:

Using radio frequency magnetron sputtering deposition deposit ZnO films on SiO2 glass, and prepare vertical structure ZnO-based thin film transistor. By means of measurement, obtain the static output characteristics, the output current can achieve the order of milliampere, get the transfer characteristics of ZnO TFTs; transconductance which get the largest value gm=0.0061S when source-drain voltage VDS=3V, source-gate VGS=0.4V; output resistance and voltage amplification coefficient, the smallest voltage amplification factor is μ=1.16056,still have voltage amplification effect.

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Periodical:

Advanced Materials Research (Volume 981)

Pages:

834-837

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.981.834

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Online since:

July 2014

Authors:

Yue Shan*, Yan Hong Wu, Dong Xing Wang, Yue Zhang, Jia Bin Chen, Jing Hua Yin, Hong Zhao

Keywords:

Output Static Characteristics, Radio Frequency Magnetron Sputtering, ZnO TFTs

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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