The Fabrication and Characteristics of CuPc Thin Film Phototransistor

Yong Shuang Zhang; Min Zhu; Dong Xing Wang; Ze Ying Wang; Yue Yue Wang; Jing Hua Yin

doi:10.4028/www.scientific.net/AMR.981.826

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 981The Fabrication and Characteristics of CuPc Thin...

The Fabrication and Characteristics of CuPc Thin Film Phototransistor

Abstract:

Organic transistors consist of a vertical type are promising due to their shorter channel length. We have fabricated a vertical structure thin film phototransistor: ITO/CuPc/Al/CuPc/Cu. Detected this device and then the results show that the I-V properties of the transistors exhibit unsaturated characteristics and photosensitive characteristics. When V_ec=3V, amplification factor of the device without light is 16.5 and the 625nm light amplification factor is 266.2.

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Advanced Materials Research (Volume 981)

Pages:

826-829

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.981.826

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Online since:

July 2014

Authors:

Yong Shuang Zhang*, Min Zhu, Dong Xing Wang, Ze Ying Wang, Yue Yue Wang, Jing Hua Yin

Keywords:

CuPc, I-V Characteristics, Light Amplification Factor, Vertical Structure

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