The Research of Trap Level Distribution of PI/AlN (Treated)-MMT Films with Different Contents Based on Decay Charge Theory

Abstract:

Through the theoretical deviation based on charge decay theory a trap level distribution function relative to the isothermal discharge current is given in this paper. Based on that, the effect of AlN(treated)-MMT nanoparticles with different contents of 1wt%, 3wt%, 5wt% on surface trap level distribution is researched. The experimental results show that the trap level density is significantly increased compared with traditional IDC and TSC methods. Trap level density and the number of trap charges increase due to the doping AlN (treated)-MMT nanoparticles, and increase with doping contents. The maximum trap energy level density of AlN(treated)-MMT film with 5wt% is 9.14×10²⁴/(eV·m³) , which is 3.3 times compared with the PI film corresponding to the trap level in the range of 1.0~1.1eV. The trap level density is affected by the interface trap effect caused by the AlN(treated)-MMT nanoparticles and different contents.

• Periodical: Advanced Materials Research (Volume 981)
• Pages: 855-858
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.981.855
• Online since: July 2014
• Authors: Yuan Yuan Liu*, Jing Hua Yin, Yao Lei
• Keywords: AlN Nanoparticle, Decay Charge, IDC, Trap Level Distribution

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