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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 986-987Electron Mobility Model for Tensile...

Electron Mobility Model for Tensile Strained-Si(101)

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Abstract:

Nowadays, the strained-Si technology has been used to maintain the momentum of semiconductor scaling due to its enhancement performance result from the higher mobility. In this paper, the influence of ionizing impurity scattering, acoustic phonon scattering and intervalley scattering to strained-Si (101) material is discussed.In addition, a calculation of the electron mobility in Strained-Si (101) material is made using the average momentum relaxation time method described in Ref [1]. The results show that the electron mobility increases gradually for both [001] and [100] orientations while for [010] orientation increases rapidly with the increasing Ge fraction x.^[1]

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Periodical:

Advanced Materials Research (Volumes 986-987)

Pages:

131-135

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.986-987.131

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Online since:

July 2014

Authors:

Jian An Wang*, Meng Nan, Hui Yong Hu, He Ming Zhang

Keywords:

Electron, Model, Strain

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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