A Sense Amplifier for Low Voltage Embedded Flash Memories

Hua Zhang

doi:10.4028/www.scientific.net/AMR.986-987.1734

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 986-987A Sense Amplifier for Low Voltage Embedded Flash...

A Sense Amplifier for Low Voltage Embedded Flash Memories

Abstract:

A sense amplifier applied for low voltage embedded flash memories is presented. The sense amplifier uses an enhanced current sensing method allowing power supplies lower than 1.5 V to be used. The sense amplifier was implemented in a FLASH realized with a 0.13 um FLASH technology. Simulation results showed a read access time of about 25 ns with a power supply of 1.5 V, and 32ns with a power supply of 1.2V.

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Periodical:

Advanced Materials Research (Volumes 986-987)

Pages:

1734-1737

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.986-987.1734

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Online since:

July 2014

Authors:

Hua Zhang*

Keywords:

Current Sensing, Embedded Flash Memories, Low Voltage, Sense Amplifier

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* - Corresponding Author

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