Hidden Markov Modeling for Nakagami Fading Channel

Yi Huai Yang; Li Fang Wang; Yan Ping Sun

doi:10.4028/www.scientific.net/AMR.989-994.2576

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 989-994Hidden Markov Modeling for Nakagami Fading Channel

Hidden Markov Modeling for Nakagami Fading Channel

Abstract:

In this paper, we proposed a novel hidden Markov model (HMM) to approximate the characteristic of the Nakagami Fading channel. Our study is based on a Hidden Markov Model (HMM). The channel switches between ‘good’ and ‘bad’ channel situation. The transition between the sub-states of the channel is governed by a Markov Chain, which some self-return state is hidden. The performance of the model is studied by simulating probability density functions (PDF), cumulative distribution functions (CDF), level cross rate (LCR) and average fade duration (AFD).

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Periodical:

Advanced Materials Research (Volumes 989-994)

Pages:

2576-2579

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.989-994.2576

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Online since:

July 2014

Authors:

Yi Huai Yang, Li Fang Wang*, Yan Ping Sun

Keywords:

Channel Modeling, Finite State Markov Channel (FSMC), Hidden Markov Model (HMM), Rayleigh Fading Channel

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