The Preparation of ZnO: Al Thin Films on Flexible Substrates by Magnetron Sputtering Method

Abstract:

ZnO: Al film was deposited on TPT substrate with SiO₂ buffer layer by RF magnetron sputtering. The obtained film had a hexagonal structure and highly (002) preferred orientation. The lattice constant distortion of the film with buffer layer was decreased and the compressive stress was 0.779GPa. The carrier concentratio reached to 3.15×10⁺²⁰/cm3. The resistivity of ZAO film with SiO₂ buffer layer was about 9.2×10^-3 Ω·cm and the average transmittance was over 72% in the range of 380~900nm.

• Periodical: Advanced Materials Research (Volumes 989-994)
• Pages: 65-68
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.989-994.65
• Online since: July 2014
• Authors: Xiao Jing Wang*
• Keywords: Buffer Layer, Magnetron Sputtering, Property, Structure, ZnO:Al

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