Ferromagnetic Property of Co and Fe-Implanted ZnO Thin Film at Room Temperature

Abstract:

The results Co and Fe implanted ZnO thin films were studied before and after 200 MeV Ag ion irradiation. The as-implanted films shows the presence of nano sized Co and Fe clusters as seen through XRD patterns and exhibited high resistivity compared to un-implanted films. After Ag ion irradiation the Co and Fe clusters get dissolved in ZnO lattice and the films resistivity reduced to half of the as implanted values. The magnetic properties of Ag irradiated films were confirmed through magnetization hysteresis and Co implanted films exhibit higher magnetization compared to Fe implanted films.

• Periodical: Advances in Science and Technology (Volume 52)
• Pages: 42-47
• DOI: https://doi.org/10.4028/www.scientific.net/AST.52.42
• Online since: October 2006
• Authors: W.K. Choi, Basavaraj Angadi, H.C. Park, J.H. Lee, Jong Han Song, Ravi Kumar
• Keywords: Co-Implanted ZnO, Diluted Magnetic Semiconductor (DMS), Fe-Implanted ZnO, Ferromagnetic, Swift Heavy Ion (SHI) Irradiation

References

[1] S. A. Wolf, D. D. Awschalom, R. A. Burhman, J. M. Daughton, S. von Molnar, M. L. Roukes, A. Y. Chtchelkanova and D. M. Treger, Science Vol. 294 (2001), p.1488.

DOI: 10.1126/science.1065389

[2] I. Malajovich, J. J. Berry, N. Samarth and D. D. Awschalom, Nature Vol. 411 (2001), p.770.

[3] H. Ohno, Science Vol. 281 (1998), p.951.

[4] J.K. Furdyna and J. Kossut: Diluted magnetic semiconductors, semiconductors and semimetals, (Academic, Boston 1988).

[5] T. Dietle, H. Ohno, F. Matsukura, J. Cibert, T. Fukumura and M. Koinuma, Science Vol. 291 (2001), p.854.

[6] S. von Molnar and D. Read, Proc. IEEE Vol. 91 (2003), p.715.

[7] K. Sato and H. Katyama, Physica B Vol. 308 (2001), p.904.

[8] K. Ueda, H. Tabata and T. Kawai, Appl. Phys. Lett. Vol. 79 (2001), p.988.

[9] S-J. Han, J.W. Song, C. -H. Yang, S.H. Park, J. -H. Park, Y.H. Jeong, and K.W. Rhie, Appl. Phys. Lett. Vol. 81 (2002), p.4212.

[10] P. Sharma, A. Gupta, K.V. Rao, F.J. Owens, R. Sharma, R. Ahuja, J.M. Osorio Guillen, B. Johansson and G.A. Gehring, Nature Materials Vol. 2 (2003), p.673.

DOI: 10.1038/nmat984

[11] D.P. Norton, M.E. Overberg, S.J. Pearton, K. Pruessner, J.D. Budai, L.A. Boatner, M.F. Chisholm, J.S. Lee, Z.G. Khim, Y.D. Park and R.G. Wilson, Appl. Phys. Lett. Vol. 83 (2003), p.5488.

DOI: 10.1063/1.1637719

[12] N.A. Theodoropoulou, A.F. Hebard, D.P. Norton, J.D. Budai, L.A. Boatner, J.S. Lee, Z.G. Khim, Y.D. Park, M.E. Overberg, S.J. Pearton and R.G. Wilson, Solid State Electronics Vol. 47 (2003), p.2231.

DOI: 10.1016/s0038-1101(03)00203-x

[13] R. Kumar, R.J. Choudhary, S.I. Patil, Shahid Husain, J.P. Srivastava, S.P. Sanyal and S.E. Lofland, J. Appl. Phys. Vol. 96 (2004), p.7383.

[14] S. Khatua, P.K. Mishra, Ravi Kumar, D.C. Kundaliya, D. Buddhikot, R. Pinto and S.K. Malik, J. Appl. Phys. Vol. 96 (2004), p.7403.

[15] B. Angadi, V.M. Jali, M.T. Lagare, N.S. Kini, A.M. Umarji, R. Kumar, S.K. Arora and D. Kanjilal. Nucl. Instr. And Meth. Part B Vol. 187 (2002), p.87.

[16] D. Lesueur and A. Dunlop, Rad. Eff. and Def. in Solids Vol. 126 (1993), p.163.

[17] G. Szenes, Phys. Rev. B Vol. 51 (1995), p.8026.

[18] Y.S. Jung, O. Kononenko, J.S. Kim and W.K. Choi, J. Cryst. Growth Vol. 214 (2005), p.418.

[19] D.H. Kim, J.S. Yang, Y.S. Kim, T.W. Noh, S.D. Bu, S. -I. Baik, Y. -W. Kim, Y.D. Park, S.J. Pearton, J. -Y. Kim, J. -H. Park, H. -J. Lin, C.T. Chen, and Y.J. Song, Phys. Rev. B Vol. 71 (2005), p.014440.

[20] J. H. Park, M.G. Kim, H.M. Jang, Sangwoo Ryu, and Y.M. Kim, Appl. Phys. Lett. Vol. 84 (2004), p.1338.

[21] M. M. Venkatesan, C. B. Fitzgerald, J. G. Lunney, and J. M. D. Coey, Phys. Rev. Lett. Vol. 93 (2004), p.177206.