Low Temperature Crystallization of Sputter-Deposited TiNi Films

Abstract:

We have found that deposited film can be crystallized without the post-annealing treatment but with the simultaneous ion-irradiation during sputter-deposition at very low substrate temperature. The present paper reviews the low temperature crystallized TiNi films deposited by the above technique. An RF magnetron sputtering apparatus equipped with separate confocal sources as well as with a heating and ion-irradiating system for substrates was used to make the films crystalline. Without using the ion-irradiating system, the films deposited on ambient-temperature substrate have been amorphous. However, crystallized film is deposited even at 353 K of substrate temperature with using the system. Appropriate ion-irradiation is considered to be help to crystallize the film at low substrate temperature. Broad and doublet X-ray diffraction profile of the film, which was diffracted from B19’ and/or R phase, was recorded between 42 degree to 45 degree in 2 theta. The crystallized film deposited on a polyimide sheet was cut into the shape of a double-beam cantilever and the ends of the two beams were connected to an electrical power supply. The cantilever shows a repeatable two-way motion by electrical cycle of 0.1 Hz at room temperature.

• Periodical: Advances in Science and Technology (Volume 78)
• Pages: 81-86
• DOI: https://doi.org/10.4028/www.scientific.net/AST.78.81
• Online since: September 2012
• Authors: Yoichi Kishi, Noriaki Ikenaga, Noriyuki Sakudo, Zenjiro Yajima
• Keywords: Ion Irradiation, Martensitic Transformation (MT), R-Phase, Sputtering, Two-Way Motion

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