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Structural and High Frequency Dielectric Properties of Ba(ZrxTi1-x)O3 Films Prepared by Reactive Magnetron Sputtering Using Metal Targets
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Structural and High Frequency Dielectric Properties of Ba(ZrxTi1-x)O3 Films Prepared by Reactive Magnetron Sputtering Using Metal Targets

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Abstract:

Ba (ZrxTi1-x)O3 (BZT) films with different Zr contents were deposited on (100)MgO substrates by RF-magnetron reactive sputtering using metal targets. The BZT films epitaxially grew on MgO substrates with only (001)/(100) orientation and had a single perovskite phase. In all cases, the ratio of Ba/Ti was stoichiometry and BZT films possess a dense microstructure. The effect of Zr content on the crystal structure was studied. The grain size was decreased with increasing Zr content. The dielectric properties of the BZT films were also measured at high frequencies region. The reliability of the high-frequency dielectric properties extracted from the measured S11 reflection coefficients. The capacitance for BZT film showed little dispersion and low dielectric loss at 1-18 GHz. These results indicated that we succeeded in depositing high-quality and potential tunable ferroelectrics for high frequency applications.

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Periodical:

Advances in Science and Technology (Volume 90)

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1-6

DOI:

https://doi.org/10.4028/www.scientific.net/AST.90.1

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Online since:

October 2014

Authors:

Jin Woong Kim*, Hiromi Shima, Takashi Yamamoto, Hiroshi Funakubo, Ken Nishida

Keywords:

BZT Film, Grain Size, High Frequency, Metal Targets, Tunable Ferroelectrics

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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