Effect of Isovalent B-Site Doping on Structural and Electrical Properties of Bismuth-Sodium-Titanate

Abstract:

Samples exhibiting substitution of Titanium in Bismuth-Sodium-Titanate (BNT) by isovalent Zirconium, Tin and Germanium (Bi_0.5Na_0.5Ti_(1-x)D_xO₃ with D = Zr, Ge and Sn and x = 0.0025; 0.0050; 0.01; 0.02; 0.04; 0.08) were investigated with respect to microstructure, relative permittivity, loss factor and polarization. The substituents differ in mass, ionic radius and d-electron configuration. The shift of transitions observed in plots of permittivity and loss factor vs. temperature indicate the influence of the ionic radius. The occurrence of a pinched hysteresis loop at ambient temperature in the Sn-doped samples and the absence of any pinching in the hysteresis loops of Zr-and Ge-doped samples give rise to the assumption that this feature of polarization is connected to the ionic radius combined with the d¹⁰ electron configuration of Sn⁴⁺.

• Periodical: Advances in Science and Technology (Volume 90)
• Pages: 43-50
• DOI: https://doi.org/10.4028/www.scientific.net/AST.90.43
• Online since: October 2014
• Authors: Klaus Reichmann*, Michael Naderer, Jörg Albering, Franz Andreas Mautner
• Keywords: Isovalent Doping, Lead-Free, Piezoelectric Ceramic (PZT)

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