Extraction of Filament Properties in Resistive Random Access Memory (ReRAM) Consisting of Binary-Transition-Metal-Oxides

Abstract:

Which parameter dominantly decides the value of time required to reset ReRAM (t_reset) among possible parameters, the value of a low resistance (R_L), voltage to induce reset (V_reset), and temperature to induce reset (T_reset) Although to answer this question is important to achieve faster resistive switching, detailed correlations between the parameters are still unclear. In this paper, we extracted t_reset, V_reset, R_L and T_reset at the same time by combining two electrical measurements. As a result, we found a clear correlation between V_reset, R_L, and T_reset, meaning that each parameter can not be controlled independently. T_reset increases not only with increasing V_reset but also with increasing R_L, which suggests the necessity of introducing ununiformly-shaped filamens and resistive switching takes place at the narrowing part of the filament.

• Periodical: Advances in Science and Technology (Volume 95)
• Pages: 84-90
• DOI: https://doi.org/10.4028/www.scientific.net/AST.95.84
• Online since: October 2014
• Authors: Takumi Moriyama*, Ryosuke Koishi, Kouhei Kimura, Satoru Kishida, Kentaro Kinoshita
• Keywords: Nickel Oxide (NiO), ReRAM, RESET, Switching Time

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