Resistive Switching Behavior in Undoped α-Fe2O3 Film with a Low Resistivity

Yukiko Ogawa; Yuji Sutou; Daisuke Ando; Junichi Koike

doi:10.4028/www.scientific.net/AST.95.96

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Extraction of Filament Properties in Resistive Random Access Memory (ReRAM) Consisting of Binary-Transition-Metal-Oxides
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Elucidation of Metal Diffusion Mechanism in Conducting-Bridge Random Access Memory (CB-RAM) Using First-Principle Calculation
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Resistive Switching Behavior in Undoped α-Fe₂O₃ Film with a Low Resistivity
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Thermal Conductivity Measurement of a Sb₂Te₃ Phase Change Nanowire
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HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 95Resistive Switching Behavior in Undoped α-Fe2O3...

Resistive Switching Behavior in Undoped α-Fe₂O₃ Film with a Low Resistivity

Abstract:

The resistive switching behavior of a low resistive p-type α-Fe₂O₃ thin film sandwiched between Fe bottom electrode and top electrodes of various materials (Fe, Ni and TiN) was studied by current-voltage measurements. When TiN was used for top electrode of memory cell, the reversible resistive switching behavior was observed for over 100 cycles. From impedance measurement, it was suggested that the resistive switching behavior in the TiN/p-type α-Fe₂O₃/Fe device is attributed to the change of the contact resistance in the interface between TiN and α-Fe₂O₃ layers.

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Periodical:

Advances in Science and Technology (Volume 95)

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96-99

DOI:

https://doi.org/10.4028/www.scientific.net/AST.95.96

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Online since:

October 2014

Authors:

Yukiko Ogawa*, Yuji Sutou, Daisuke Ando, Junichi Koike

Keywords:

Iron Oxide, Resistive Switching Behavior, Schottky Contact

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