Switching in Polymer Memory Devices Based on Polymer and Nanoparticles Admixture

Abstract:

In this paper, a non-volatile memory device based on a blend of metal oxides (Known as NiO) and polymer has been investigated. These devices have shown to display memory effects; a marked difference in electrical conductivity between the ‘on’ and ‘off’ states. However, the exact mechanism under-pinning these two conductivities states are not very clear. The structures used in investigation are metal-admixture-metal (MAM) and metal-insulator-semiconductor (MIS) devices. Also, glass and p-types silicon (100 orientations) with a pre-prepared Ohmic back contact were used for the MAM and MIS substrates respectively. This work will address some of the questions in regard to the electrical bistability shown by polymer memory devices.

• Periodical: Advances in Science and Technology (Volume 95)
• Pages: 107-112
• DOI: https://doi.org/10.4028/www.scientific.net/AST.95.107
• Online since: October 2014
• Authors: Z.H. Alhalafi*, Shashi Paul
• Keywords: Nickel Oxide (NiO), Non-Volatile Memory (NVM), Organic Memory, Resistive Random Access Memory

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