Elucidation of Metal Diffusion Mechanism in Conducting-Bridge Random Access Memory (CB-RAM) Using First-Principle Calculation

Kentaro Kinoshita; Takahiro Yamasaki; Sho Yura; Takahisa Ohno; Satoru Kishida

doi:10.4028/www.scientific.net/AST.95.91

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HomeAdvances in Science and TechnologyAdvances in Science and Technology Vol. 95Elucidation of Metal Diffusion Mechanism in...

Elucidation of Metal Diffusion Mechanism in Conducting-Bridge Random Access Memory (CB-RAM) Using First-Principle Calculation

Abstract:

It is important to specify the Cu diffusion path in the oxide layer of a Cu/oxide/Pt-structured conducting-bridge random access memory (CB-RAM), in terms of both the elucidation of resistive switching mechanism and optimization of memory performance. A first-principle calculation is effective in specifying the Cu diffusion path with atomic resolution. However, reported results of first-principle calculations are based on too simplified model to depict the actual system of CB-RAM. In this paper, a periodic slab model for the first-principle calculation of Cu diffusion process in HfO₂-CB-RAM was proposed based on experimental results. Both the most probable Cu diffusion surface and Cu diffusion path were suggested by the first-principles calculations based on the model. It was also suggested that the Cu diffusion path was modified by introducing oxygen vacancy into the Cu diffusion surface.

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Periodical:

Advances in Science and Technology (Volume 95)

Pages:

91-95

DOI:

https://doi.org/10.4028/www.scientific.net/AST.95.91

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Online since:

October 2014

Authors:

Kentaro Kinoshita*, Takahiro Yamasaki, Sho Yura, Takahisa Ohno, Satoru Kishida

Keywords:

Adsorption Energy, Conducting-Bridge Random Access Memory (Cb-RAM), Cu, Diffusion, First-Principles Calculation, HfO₂, Surface Energy

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