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Dislocations in Semiconductors as One Dimensional Electronic Systems
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Dislocation Superlattices Based on Lead Chalcogenides as HTSC Models
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Metastable Behavior of Dislocation Charge in Space Charge Region
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Possibility of Reconstruction of Concentration Profile of Point Defects in Crystals by the Method of X-Ray Interference Diffractometry
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Anomalously Wide Impurity Atomosphere near the Dislocation Slip Plane in Si
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Oxygen-Related Thermal Donors in Heat-Treated Cz-Si
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 103-105Possibility of Reconstruction of Concentration...

Possibility of Reconstruction of Concentration Profile of Point Defects in Crystals by the Method of X-Ray Interference Diffractometry

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Defects in Semiconductors I

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Periodical:

Defect and Diffusion Forum (Volumes 103-105)

Pages:

491-496

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.103-105.491

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Online since:

January 1993

Authors:

T.E. Goureev, A. Nikulin, P.V. Petrashen, A.A. Snigirev

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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