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Dislocations in Semiconductors as One Dimensional Electronic Systems
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Dislocation Superlattices Based on Lead Chalcogenides as HTSC Models
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Metastable Behavior of Dislocation Charge in Space Charge Region
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Possibility of Reconstruction of Concentration Profile of Point Defects in Crystals by the Method of X-Ray Interference Diffractometry
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Anomalously Wide Impurity Atomosphere near the Dislocation Slip Plane in Si
p.497

Oxygen-Related Thermal Donors in Heat-Treated Cz-Si
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Formation and Properties of Thermal Donors Generated by Prolonged Annealing in Si Crystals with Different Oxygen and Carbon Contents
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Metastability of Thermal Donors in Silicon: Photo-EPR Study
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Peculiarities of Thermal Donors Generation and Oxygen Precipitation at 650°C with Silicon Irradiated by Neutrons
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 103-105Anomalously Wide Impurity Atomosphere near the...

Anomalously Wide Impurity Atomosphere near the Dislocation Slip Plane in Si

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Defects in Semiconductors I

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Periodical:

Defect and Diffusion Forum (Volumes 103-105)

Pages:

497-504

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.103-105.497

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Online since:

January 1993

Authors:

V.G. Eremenko, O.V. Trofimov

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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