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Oxygen-Related Thermal Donors in Heat-Treated Cz-Si
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Formation and Properties of Thermal Donors Generated by Prolonged Annealing in Si Crystals with Different Oxygen and Carbon Contents
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Metastability of Thermal Donors in Silicon: Photo-EPR Study
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Peculiarities of Thermal Donors Generation and Oxygen Precipitation at 650°C with Silicon Irradiated by Neutrons
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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 103-105Formation and Properties of Thermal Donors...

Formation and Properties of Thermal Donors Generated by Prolonged Annealing in Si Crystals with Different Oxygen and Carbon Contents

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Defects in Semiconductors I

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Periodical:

Defect and Diffusion Forum (Volumes 103-105)

Pages:

517-528

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.103-105.517

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Online since:

January 1993

Authors:

V.M. Babich, N.P. Baran, A.A. Bugai, V.B. Kovalchuk, V.M. Maksimenko, B.D. Shanina

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© 1993 Trans Tech Publications Ltd. All Rights Reserved

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