Paper Titles

Formation and Properties of Thermal Donors Generated by Prolonged Annealing in Si Crystals with Different Oxygen and Carbon Contents
p.517

Metastability of Thermal Donors in Silicon: Photo-EPR Study
p.529

Peculiarities of Thermal Donors Generation and Oxygen Precipitation at 650°C with Silicon Irradiated by Neutrons
p.537

Thermal Donor Formation Affected by Strain Fields Induced by Imperfections of Silicon Crystal Lattice
p.543

Analytical Approach to the Theory of Transition-Metal Impurities in Semiconductors
p.551

Cluster Approach for Investigation of Semiconductor Crystals
p.565

Structure of Deep Impurity States of II, III, IV Group Elements in IV-VI Semiconductors
p.571

Coexistence of Large and Small Radius Electron States on Defect and Problem of Charge Photo-Transfer in Ruby
p.579

Two-Level Correlated Model for Recombination in y,e-Irradiated Silicon
p.587

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 103-105Analytical Approach to the Theory of...

Analytical Approach to the Theory of Transition-Metal Impurities in Semiconductors

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors I

Info:

Periodical:

Defect and Diffusion Forum (Volumes 103-105)

Pages:

551-564

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.103-105.551

Citation:

Cite this paper

Online since:

January 1993

Authors:

N.P. Il'in, V.F. Masterov

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1993 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: