Preface
Introduction
p.1
p.1
Theoretical Models for DX Deep Donor States Based on Ab Initio Total Energy Calculations
p.11
p.11
DX Microstructure and Nature in AlXGa1-XAs: Contributions from Structure Sensitive Experiments
p.35
p.35
Impact of the DX Centers on the Electrical Properties of AlGaAs
p.55
p.55
Deep Level Transient Spectroscopy of DX Centers
p.75
p.75
Photoluminescence Properties of (Al,Ga)As Alloys and GaAs under Pressure in the Framework of DX Center Studies
p.97
p.97
DX Centers in Other III-V Alloys
p.123
p.123
Minimizing DX Center Effects in AlGaAs Based Devices
p.135
p.135
Theoretical Models for DX Deep Donor States Based on Ab Initio Total Energy Calculations
Abstract:
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Periodical:
Defect and Diffusion Forum (Volume 108)
Pages:
11-34
Citation:
Online since:
February 1994
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Сopyright:
© 1994 Trans Tech Publications Ltd. All Rights Reserved
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