Paper Titles

Introduction
p.1

Theoretical Models for DX Deep Donor States Based on Ab Initio Total Energy Calculations
p.11

DX Microstructure and Nature in Al_XGa_1-XAs: Contributions from Structure Sensitive Experiments
p.35

Impact of the DX Centers on the Electrical Properties of AlGaAs
p.55

Deep Level Transient Spectroscopy of DX Centers
p.75

Photoluminescence Properties of (Al,Ga)As Alloys and GaAs under Pressure in the Framework of DX Center Studies
p.97

DX Centers in Other III-V Alloys
p.123

Minimizing DX Center Effects in AlGaAs Based Devices
p.135

The DX Centers: A Comparison of Theoretical Predictions and Experimental Results
p.159

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 108Photoluminescence Properties of (Al,Ga)As Alloys...

Photoluminescence Properties of (Al,Ga)As Alloys and GaAs under Pressure in the Framework of DX Center Studies

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DX Centers

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Periodical:

Defect and Diffusion Forum (Volume 108)

Pages:

97-122

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.108.97

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Online since:

February 1994

Authors:

Mathieu Leroux

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Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

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