Paper Titles

Introduction
p.1

Theoretical Models for DX Deep Donor States Based on Ab Initio Total Energy Calculations
p.11

DX Microstructure and Nature in Al_XGa_1-XAs: Contributions from Structure Sensitive Experiments
p.35

Impact of the DX Centers on the Electrical Properties of AlGaAs
p.55

Deep Level Transient Spectroscopy of DX Centers
p.75

Photoluminescence Properties of (Al,Ga)As Alloys and GaAs under Pressure in the Framework of DX Center Studies
p.97

DX Centers in Other III-V Alloys
p.123

Minimizing DX Center Effects in AlGaAs Based Devices
p.135

HomeDefect and Diffusion ForumDefect and Diffusion Forum Vol. 108DX Microstructure and Nature in AlXGa1-XAs:...

DX Microstructure and Nature in Al_XGa_1-XAs: Contributions from Structure Sensitive Experiments

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Abstract:

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DX Centers

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Periodical:

Defect and Diffusion Forum (Volume 108)

Pages:

35-54

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.108.35

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Online since:

February 1994

Authors:

Johann Martin Spaeth, Matthias Linde

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© 1994 Trans Tech Publications Ltd. All Rights Reserved

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