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HomeDefect and Diffusion ForumDefect and Diffusion Forum Vols. 119-120Selective Mixing of GaAs/(Ga,Al)As Interfaces by...

Selective Mixing of GaAs/(Ga,Al)As Interfaces by Ga⁺ Implantation

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Defect and Diffusion Forum Vols. 119-120

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Periodical:

Defect and Diffusion Forum (Volumes 119-120)

Pages:

127-174

DOI:

https://doi.org/10.4028/www.scientific.net/DDF.119-120.127

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Online since:

March 1995

Authors:

C. Vieu

Keywords:

Amorphisation, Cathodoluminescence, GaAs/AlGaAs Heterojunction, Interdiffusion, Ion Beam Damage, Ion Beam Mixing, Ion Implantation, Nanostructure, Photoluminescence (PL), Quantum Wire, Secondary Ion Mass Spectroscopy (SIMS), TEM, Thermal Annealing

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© 1995 Trans Tech Publications Ltd. All Rights Reserved

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